报告题目:Band-coupling-induced unusual material properties of Cu-based compounds
报 告 人:魏苏淮 教授(国家特聘专家),北京计算科学研究中心
研究方向:凝聚态物理
报告时间:2024年3月8日(星期五)下午16:00
报告地点:量子楼410报告厅
报告摘要:
Among all the metal elements, Cu has the highest fully occupied d orbital states which are close in energy to its usually unoccupied 4s orbital state. Therefore, due to the strong s-d, as well as p-d band coupling in Cu-based compounds, such as Cu chalcogenides, oxides and halides, they often exhibit some unusual physical properties such as unexpected crystal structures and band structures, deep Cu acceptor levels in II-VI semiconductors, fast ionic diffusion, ultralow thermal conductivity, and high-Tc superconductivity. In this talk, I will discuss the electronic origin of these unusual behaviors based on our first-principles theoretical calculations and band-coupling model.
报告人简介:
魏苏淮教授现任北京计算科学研究中心讲席教授,国家重点专项首席科学家,国家基金委重大项目负责人,国家基金委基础科学中心骨干成员,美国物理学会会士(APS Fellow),国际材料学会会士(MRS Fellow)。1981年本科毕业于复旦大学并通过CUSPEA项目去美国留学,1985年在美国威廉玛丽星空官方网站(中国)股份有限公司取得理学博士学位,1985-2015年在美国可再生能源国家实验室(NREL)工作,2015年回国前担任NREL理论研究室主任,国家实验室Fellow。在半导体能带理论、缺陷与合金物理、能源与光电材料设计、计算方法等方面取得了系统的原创性成果。已发表SCI论文570余篇,包括74篇PRL。论文引用大于75000多次,H因子136。